Strain Engineering in 2D Semiconductors

 

Strain engineering refers to the manipulation of mechanical strain in materials, and recent studies have focused on developing effective strategies to control strain in two-dimensional (2D) semiconductors, aiming for compatibility with existing industrial processes.

Researchers have applied well-established fabrication techniques to process 2D semiconductors and create transistors. By adding silicon nitride films at the end of the process, they were able to isolate the impact of strain in the transistors, distinguishing it from temperature and doping effects. A simulation-based roadmap was also developed, demonstrating how strain evolves as devices shrink to technologically relevant dimensions, highlighting the significant potential of strain engineering in this regime.

In initial tests, this strain engineering approach enhanced the performance of 2D MoS₂ transistors while enabling reductions in both transistor channels and contacts. This work paves the way for the development of smaller, higher-performance 2D semiconductor-based transistors. 

Ongoing research is also exploring other sources of process-induced strain, such as the effects of metal deposition on 2D materials. Looking ahead, efforts are being made to extend this approach to p-type 2D transistors, whose performance currently lags behind that of n-type devices used in this study.